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| 2SA1774 Elektronische Bauelemente RoHS Compliant Product PNP Silicon General Purpose Transistor FEATURES A L 3 Top View SOT-523 Dim A Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50 Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70 * * Low Cob. Cob=4.0pF Compements the 2SC4617 S 2 B 1 B C D STRUCTURE D G G H C J K * * Expitaxial planar type PNP Silicon Teansistor H 3 Collector Base 2 1 Emitter J K L S All Dimension in mm !Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits -60 -50 -6 -0.15 Unit V V V A Collector power dissipation PC 0.15 W C C Junction temperature Storage temperature Tj Tstg 150 -55~+150 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. -60 -50 -7 - - 120 - - - Typ. - - - - - - - 140 4.0 Max. - - - -0.1 -0.1 560 -0.5 - 5.0 Unit V V V A A - V MHz pF IC=-50A IC=-1uA IE=-50A VCB=-60V VEB=-6V Conditions VCE=-6V, IC=-1mA IC/IB=-50mA/-5mA VCE=-12V, IE=-2mA, f=30MHz VCE=-12V, IE=0A, f=1MHz Output capacitance hFE values are classified as follows : Item hFE Q 120~270 R 180~390 S 270~560 Marking FQ FR FS Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Page 1 of 2 2SA1774 Elektronische Bauelemente PNP Silicon General Purpose Transistor !Electrical characteristic curves -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 COLLECTOR CURRENT : IC (mA) Ta=100C 25C -40C VCE=-6V -10 -35.0 Ta=25C -100 -31.5 Ta=25C -500 -450 -400 -350 -300 -8 -28.0 -80 -24.5 -6 -21.0 -60 -250 -17.5 -4 -200 -14.0 -40 -150 -10.5 -2 -7.0 -3.5A -100 -20 -50A -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 IB=0 -1.6 -2.0 IB=0 0 -1 -2 -3 -4 -5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=25C VCE=-5V -3V -1V DC CURRENT GAIN : hFE 200 Ta=100C 25C -1 Ta=25C DC CURRENT GAIN : hFE -0.5 -40C 200 100 -0.2 IC/IB=50 100 -0.1 20 10 50 50 VCE=-6V -5 -10 -20 -50 -100 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 -0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE=-12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 1000 20 Cib 10 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 200 5 -0.1 Ta=100C 25C -40C 100 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 50 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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